1N5358B Silicon Power Zener Diodes Circuit Board Chips Electronic Component

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Detailed Product Description

Maximum Power Dissipation:	5W	Nominal Z-voltage:	8.7...200 V
Plastic Case:	DO-201	Weight Approx:	0.8 G
Tolerance:	±5%	Type:	Diodes
High Light:	diode rectifier circuit , bridge rectifier circuit

1N5358B Silicon-Power-Zener Diodes

Silicon-Power-Zener Diodes (non-planar technology)

Silizium-Leistungs-Zener-Dioden (flächendiffundierte Dioden)

Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage Nominale Z-Spannung

Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack

Standard Zener voltage tolerance is ±5%). Other voltage tolerances and higher Zener voltages on request.

Die Toleranz der Zener-Spannung ist in der Standard-Ausführung ±5%. Andere Toleranzen oder höhere

Arbeitsspannungen auf Anfrage.

Power dissipation Verlustleistung	^Ptot	5 W 1)
Non repetitive peak power dissipation, t < 10 ms Einmalige Impuls-Verlustleistung, t < 10 ms	^PZSM	80 W
Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur	T_j ^TS	-50...+150°C -50...+175°C
Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft	^RthA	< 25 K/W 1)
Thermal resistance junction to terminal Wärmewiderstand Sperrschicht – Anschluss	^RthL	<8 K/W